Description
The TP65H050G4BS 650V, 50 mΩ gallium nitride (GaN) FET
is a normally-off device using Transphorm’s Gen IV platform.
It combines a state-of-the-art high voltage GaN HEMT with a
low voltage silicon MOSFET to offer superior reliability and
performance.
The Gen IV SuperGaN® platform uses advanced epi and
patented design technologies to simplify manufacturability
while improving efficiency over silicon via lower gate charge,
output capacitance, crossover loss, and reverse recovery
charge.
Features
 JEDEC qualified GaN technology
 Dynamic RDS(on)eff production tested
 Robust design, defined by
— Wide gate safety margin
— Transient over-voltage capability
 Enhanced inrush current capability
 Very low QRR
 Reduced crossover loss
Applications
 Datacom
 Broad industrial
 PV inverter
 Servo motor