Description
The TP65H035G4YS 650V, 35 mΩ gallium nitride (GaN) FET
is a normally-off device using Transphorm’s Gen IV platform.
It combines a state-of-the-art high voltage GaN HEMT with a
low voltage silicon MOSFET to offer superior reliability and
performance.
The Gen IV SuperGaN® platform uses advanced epi and
patented design technologies to simplify manufacturability
while improving efficiency over silicon via lower gate charge,
output capacitance, crossover loss, and reverse recovery
charge.
Features
• JEDEC qualified GaN technology
• Dynamic RDS(on)eff production tested
• Robust design, defined by
— Wide gate safety margin
— Transient over-voltage capability
• Enhanced inrush current capability
• Very low QRR
• Reduced crossover loss
Applications
• Datacom
• Broad industrial
• PV inverter
• Servo motor