Description
The TP65H300G4LSG 650V, 240 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Features
• JEDEC-qualified GaN technology
• Dynamic RDS(on) production tested
• Robust design, defined by
— Intrinsic lifetime tests
— Wide gate safety margin
— Transient over-voltage capability
• Enhanced inrush current capability
• Very low QRR
• Reduced crossover loss
Applications
• Consumer
• Power adapters
• Low power SMPS
• Lighting