Features
• AEC-Q101 qualified
• Low-loss series IGBT
• Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
• Positive VCE(sat) temperature coefficient
• Tight parameter distribution
• Maximum junction temperature: TJ = 175 °C
• 6 μs minimum short-circuit withstanding time at TJ = 150 C

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss
and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.

Applications
• Traction inverter for EV/HEV