Features
• AEC-Q101 qualified
• 6 μs of minimum short-circuit withstand time
• VCE(sat) = 1.65 V (typ.) @ IC = 200 A
• Tight parameter distribution
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Maximum junction temperature: TJ = 175 °C
• Dice on direct bond copper (DBC) substrate
• Isolation rating of 3400 Vrms/min
• UL recognition: UL 1557 file E81734

Applications
• Traction inverter

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss
and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation. Thanks to the DBC substrate, the ACEPACK SMIT surface mounting
power package offers a low thermal resistance coupled with a electrical isolated top
side thermal pad.