| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
 Unisonic Technologies |
2SK2751G-AE3-R
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207Kb/4P |
N-CHANNEL JUNCTION FET
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BAS21G-AE3-R
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136Kb/3P |
GENERAL PURPOSE DIODES
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BAS21G-AE3-R
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164Kb/3P |
GENERAL PURPOSE DIODES
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LL431G-AE3-R
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177Kb/5P |
PROGRAMMABLE PRECISION REFERENCE
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LL431G-AE3-R
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221Kb/5P |
PROGRAMMABLE PRECISION REFERENCE
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LL431G-AE3-R
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251Kb/5P |
PROGRAMMABLE PRECISION REFERENCE
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MMBT4401G-AE3-R
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274Kb/6P |
NPN GENERAL PURPOSE AMPLIFIER
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SK1901G-AE3-R
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222Kb/8P |
HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
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SK1901G-AE3-R
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196Kb/8P |
HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
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SK1901G-AE3-R
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218Kb/8P |
HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
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TL431G-AE3-R
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242Kb/7P |
PROGRAMMABLE PRECISION REFERENCE
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TL431G-AE3-R
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273Kb/7P |
4PROGRAMMABLE PRECISION REFERENCE
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TL431G-AE3-R
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336Kb/6P |
PROGRAMMABLE PRECISION REFERENCE
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UF601G-AE3-R
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173Kb/3P |
0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET
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UF601G-AE3-R
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194Kb/3P |
N-CHANNEL DEPLETION-MODE POWER MOSFET
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UHS41G-AE3-R
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112Kb/4P |
HALL-EFFECT LATCHED SENSOR
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ULVH431G-AE3-R
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170Kb/6P |
LINEAR INTEGRATED CIRCUIT
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ULW2091G-AE3-R
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403Kb/12P |
LINEAR INTEGRATED CIRCUIT
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UT2301G-AE3-R
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184Kb/4P |
2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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 VBsemi Electronics Co.,... |
UT2301G-AE3-R
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1Mb/9P |
P-Channel 20-V (D-S) MOSFET
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