| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
 Unisonic Technologies |
MMBT4401G-AE3-R
|
274Kb/6P |
NPN GENERAL PURPOSE AMPLIFIER
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SK1901G-AE3-R
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196Kb/8P |
HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
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SK1901G-AE3-R
|
218Kb/8P |
HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
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SK1901G-AE3-R
|
222Kb/8P |
HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
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UF601G-AE3-R
|
173Kb/3P |
0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET
|
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UF601G-AE3-R
|
194Kb/3P |
N-CHANNEL DEPLETION-MODE POWER MOSFET
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UT2301G-AE3-R
|
184Kb/4P |
2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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UT2301G-AE3-R
|
233Kb/5P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
 VBsemi Electronics Co.,... |
UT2301G-AE3-R
|
1Mb/9P |
P-Channel 20-V (D-S) MOSFET
|
 Unisonic Technologies |
UT3401G-AE3-R
|
297Kb/5P |
P-CHANNEL ENHANCEMENT MODE
|
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UT3401G-AE3-R
|
300Kb/5P |
P-CHANNEL ENHANCEMENT MOSFET
|
 VBsemi Electronics Co.,... |
UT3401G-AE3-R
|
491Kb/9P |
P-Channel 30 V (D-S) MOSFET
|
 Unisonic Technologies |
UT4101G-AE3-R
|
285Kb/4P |
P-CHANNEL ENHANCEMENT MODE
|
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UT4101G-AE3-R
|
275Kb/4P |
P-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
UT4101G-AE3-R
|
472Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
 Unisonic Technologies |
UT6401G-AE3-R
|
328Kb/5P |
P-CHANNEL POWER MOSFET
|
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UT7401G-AE3-R
|
283Kb/4P |
1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
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UT7401G-AE3-R
|
277Kb/4P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
 VBsemi Electronics Co.,... |
UT7401G-AE3-R
|
491Kb/9P |
P-Channel 30 V (D-S) MOSFET
|