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1

EN29F002 / EN29F002N

Rev. C, Issue Date: 2001/07/05

FEATURES

• 5.0V ± 10% for both read/write operation

• Read Access Time

- 45ns, 55ns, 70ns, and 90ns

• Fast Read Access Time

• Sector Architecture:

One 16K byte Boot Sector, Two 8K byte

Parameter Sectors, one 32K byte and

three 64K byte main Sectors

• Boot Block Top/Bottom Programming

Architecture

• High performance program/erase speed

- Byte program time: 10µs typical

- Sector erase time: 500ms typical

- Chip erase time: 3.5s typical

• Low Standby Current

- 1µA CMOS standby current-typical

- 1mA TTL standby current

• Low Power Active Current

- 30mA active read current

- 30mA program / erase current

• JEDEC Standard program and erase

commands

• JEDEC standard DATA polling and toggle

bits feature

• Single Sector and Chip Erase

• Sector Protection / Temporary Sector

• Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes:

Read and program another sector during

Erase Suspend Mode

• 0.4 µm double-metal double-poly

triple-well CMOS Flash Technology

• Low Vcc write inhibit < 3.2V

• 100K endurance cycle

• Package Options

- 32-pin PDIP

- 32-pin PLCC

- 32-pin TSOP (Type 1)

• Commercial and Industrial Temperature

Ranges

GENERAL DESCRIPTION

The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory.

Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with

top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main

sectors (one 32K Byte and three 64K Byte). Any byte can be programmed typically at 10µs. The EN29F002 /

EN29F002N features 5.0V voltage read and write operation. The access times are as fast as 45ns to eliminate

the need for WAIT states in high-performance microprocessor systems.

This device is designed to allow

either single sector or full chip erase operation, where each sector can be individually protected

against program/erase operations or temporarily unprotected to erase or program. The device can

sustain

a

minimum

of

100K

program/erase

cycles

on

each

sector.

EN29F002 / EN29F002N

2 Megabit (256K x 8-bit) Flash Memory