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EN29F002 bảng dữ liệu(PDF) 7 Page - List of Unclassifed Manufacturers

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EN29F002 bảng dữ liệu(HTML) 7 Page - List of Unclassifed Manufacturers

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4800 Great America Parkway, Suite 202
Tel: 408-235-8680
Santa Clara, CA 95054
Fax: 408-235-8685
7
EN29F002 / EN29F002N
Rev. C, Issue Date: 2001/07/05
Device Code can be read as 7F, 92 (hex) for EN29F002T or as 7F, 97 (hex) for EN29F002B (See
Table 4). All identifiers for manufacturer and device codes possess odd parity with the DQ7 defined
as the parity bit.
Write Mode
Write is used for device programming and erase through the command register. This mode is
selected with CE = WE = L and OE = H. The contents of the command register are the inputs to
the internal state machine. The command register is a set of latches used to store the commands
along with the addresses and data information needed to execute that command. Address latching
occurs on the falling edge of WE or CE (whichever occurs later) and data latching occurs on the
rising edge of WE or CE (whichever occurs first).
Temporary Sector Unprotect Mode
EN29F002 allows protected sectors to be temporarily unprotected for making changes to data stored
in a protected sector in system (n/a for EN29F002N). To activate the temporary sector unprotect, the
RESET pin must be set to a high voltage of VID (11V). In this mode, protected sectors can be
programmed or erased by selecting the sector addresses. Once the high voltage, VID, is removed
from RESET pin, all previously protected sectors will revert to their protected state.
RESET
Hardware Reset Mode (not available on EN29F002N)
Resetting the EN29F002 device is performed when the RESET pin is set to VIL and kept low for at
least 500ns.
The internal state machine will be reset to the read mode.
Any program/erase
operation in progress during hardware reset will be terminated and data may be corrupted.
If the RESET pin is tied to the system reset command, the device will be automatically reset to the
read mode and enable the system’s microprocessor to read the boot-up firmware from the FLASH
memory.
COMMAND DEFINITIONS
The operations of the EN29F002 are selected by one or more commands written into the command
register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase,
Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data sequences
written at specific addresses via the command register. The sequences for the specified operation
are defined in the Command Table (Table 5).
Incorrect addresses, incorrect data values or
improper sequences will reset the device to the read mode.



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