TC58FVM5B2AXB65 datasheet(22/63 Pages) TOSHIBA

22 / 63 page

TC58FVM5(T/B)(2/3)A(FT/XB)65

2003-01-29 22/63

DC CHARACTERISTICS

SYMBOL

PARAMETER

CONDITION

MIN

TYP.

MAX

UNIT

ILI

Input Leakage Current

0 V

≤ VIN ≤ VDD



±1

ILO

Output Leakage Current

0 V

≤ VOUT ≤ VDD



±1

µA

IOH = −0.1 mA

VDD − 0.4



VOH

Output High Voltage

IOH = −2.5 mA

0.85

× VDD



VOL

Output Low Voltage

IOL = 4.0 mA



0.4

IDDO1

VDD Average Random Read

Current

VIN = VIH/VIL, IOUT = 0 mA

tCYCLE = tRC = 100 ns (MIN)



IDDO2

VDD Average Program Current VIN = VIH/VIL, IOUT = 0 mA



IDDO3

VDD Average Erase Current

VIN = VIH/VIL, IOUT = 0 mA



IDDO4

VDD Average

Read-While-Program Current

VIN = VIH/VIL, IOUT = 0 mA

tCYCLE = tRC = 100 ns (MIN)



IDDO5

VDD Average

Read-while-Erase Current

VIN = VIH/VIL, IOUT = 0 mA

tCYCLE = tRC = 100 ns (MIN)



IDDO6

VDD Average Program-while-

Erase-Suspend Current

VIN = VIH/VIL, IOUT = 0 mA



IDDO7

VDD Average Page Read

Current

VIN = VIH/VIL, IOUT = 0 mA



IDDO8

VDD Average Address

Increment Read Current

(2)

VIN = VIH/VIL, IOUT = 0 mA

tRC = 100 ns (MIN)

tPRC = 25 ns (MIN)



IDDS1

VDD Standby Current

= RESET = VDD

or RESET

= VSS



IDDS2

VDD Standby Current

(Automatic Sleep Mode

(1)

)

VIH = VDD

VIL = VSS



IID

High-Voltage Input Current for

A9, OE and RESET

11.4 V

≤ VID ≤ 12.6 V



µA

IACC

High-Voltage Input Current for

/ACC

8.5 V

≤ VACC ≤ 9.5 V



VLKO

Low-VDD Lock-out Voltage



1.5



2.0

(1) The device enters Automatic Sleep Mode in which the address remains fixed for during 150 ns.

(2) (IDDO1 + IDDO7 × 7)/8words

AC TEST CONDITIONS

PARAMETER

CONDITION

Input Pulse Level

VDD, 0.0 V

Input Pulse Rise and Fall Time (10%~90%)

5 ns

Timing Measurement Reference Level (input)

VDD/2, VDD/2

Timing Measurement Reference Level (output)

VDD/2, VDD/2

Output Load

CL (100 pF) + 1 TTL Gate/CL (30 pF) + 1 TTL Gate

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