Dec 2009. Version 1.1

MagnaChip Semiconductor Ltd

.

2

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDP9N50TH

-55~150

TO-220

Tube

Halogen Free

Electrical Characteristics (Ta =25

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

500

-

-

Gate Threshold Voltage

3.0

-

5.0

V

Drain Cut-Off Current

-

-

1

µA

Gate Leakage Current

-

-

100

nA

Drain-Source ON Resistance

0.72

0.85

Forward Transconductance

-

7

-

S

Dynamic Characteristics

Total Gate Charge

-

19

Gate-Source Charge

-

5.7

Gate-Drain Charge

(3)

-

7.6

nC

Input Capacitance

-

780

Reverse Transfer Capacitance

-

4.0

Output Capacitance

-

100

pF

Turn-On

Delay Time

-

18

Rise Time

-

34

Turn-Off Delay Time

-

38

Fall Time

(3)

-

27

ns

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to Source

Diode Forward Current

-

9.0

-

A

Source-Drain Diode Forward

Voltage

-

1.4

V

Body Diode Reverse Recovery

Time

-

272

ns

Body Diode Reverse Recovery

Charge

(3)

-

2.0

µC

Note :

1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

3.

4. L=6.7mH,