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AS4C64M8D1 bảng dữ liệu(PDF) 11 Page - Alliance Semiconductor Corporation

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AS4C64M8D1
Confidential
10
Rev.
2.0
Oct. /2014
Table 12. Absolute Maximum Rating
Symbol
Item
Rating
Unit
VIN, VOUT
Input, Output Voltage
- 0.5~ VDDQ + 0.5
V
VDD, VDDQ
Power Supply Voltage
- 1~3.6
V
TA
Ambient Temperature
0~70
°C
TSTG
Storage Temperature
- 55~150
°C
TSOLDER
Soldering Temperature
260
°C
PD
Power Dissipation
1
W
IOS
Short Circuit Output Current
50
mA
Note1: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device.
Note2: These voltages are relative to Vss
Table 13. Recommended D.C. Operating Conditions (TA = 0 ~ 70 C)
Symbol
Parameter
Min.
Max.
Unit
VDD
Power Supply Voltage
2.3
2.7
V
VDDQ
Power Supply Voltage (for I/O Buffer)
2.3
2.7
V
VREF
Input Reference Voltage
0.49 x VDDQ
0.51 x VDDQ
V
VIH (DC)
Input High Voltage (DC)
VREF + 0.15
VDDQ + 0.3
V
VIL (DC)
Input Low Voltage (DC)
-0.3
VREF – 0.15
V
VTT
Termination Voltage
VREF - 0.04
VREF + 0.04
V
VIN (DC)
Input Voltage Level, CK and CK inputs
-0.3
VDDQ + 0.3
V
VID (DC)
Input Different Voltage, CK and CK inputs
0.36
VDDQ + 0.6
V
II
Input leakage current
-2
2
A
IOZ
Output leakage current
-5
5
A
IOH
Output High current (VOUT = 1.95V)
-16.2
-
mA
IOL
Output Low current (VOUT = 0.35V)
16.2
-
mA
Note : All voltages are referenced to VSS.
Table 14. Capacitance (VDD = 2.5V, f = 1MHz, TA = 25 C)
Symbol
Parameter
Min.
Max.
Unit
CIN1
Input Capacitance (CK, CK )
2
3
pF
CIN2
Input Capacitance (All other input-only pins)
2
3
pF
CI/O
DQ, DQS, DM Input/Output Capacitance
4
5
pF
Note: These parameters are guaranteed by design, periodically sampled and are not 100% tested



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