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STM32F769AI bảng dữ liệu(PDF) 156 Page - STMicroelectronics

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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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STM32F769AI bảng dữ liệu(HTML) 156 Page - STMicroelectronics

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Electrical characteristics
STM32F765xx STM32F767xx STM32F768Ax STM32F769xx
156/255
DocID029041 Rev 4
5.3.16
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
Table 55. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD
Supply current
Write / Erase 8-bit mode, VDD = 1.7 V
-
14
-
mA
Write / Erase 16-bit mode, VDD = 2.1 V
-
17
-
Write / Erase 32-bit mode, VDD = 3.3 V
-
24
-
Table 56. Flash memory programming (single bank configuration
nDBANK=1)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit
tprog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-
16
100(2)
μs
tERASE32KB Sector (32 KB) erase time
Program/erase
parallelism (PSIZE) = x 8
-
400
800
ms
Program/erase
parallelism (PSIZE) = x 16
-
250
600
Program/erase
parallelism (PSIZE) = x 32
-
200
500
tERASE128KB Sector (128 KB) erase time
Program/erase
parallelism (PSIZE) = x 8
-
1100
2400
ms
Program/erase
parallelism (PSIZE) = x 16
-
800
1400
Program/erase
parallelism (PSIZE) = x 32
-
500
1100
tERASE256KB Sector (256 KB) erase time
Program/erase
parallelism (PSIZE) = x 8
-
2.1
4
s
Program/erase
parallelism (PSIZE) = x 16
-
1.5
2.6
Program/erase
parallelism (PSIZE) = x 32
-1
2
tME
Mass erase time
Program/erase
parallelism (PSIZE) = x 8
-16
32
s
Program/erase
parallelism (PSIZE) = x 16
-11
22
Program/erase
parallelism (PSIZE) = x 32
-8
16



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