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STM32F398VE bảng dữ liệu(PDF) 85 Page - STMicroelectronics |
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STM32F398VE bảng dữ liệu(HTML) 85 Page - STMicroelectronics |
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85 / 151 page ![]() DocID027227 Rev 2 85/151 STM32F398VE Electrical characteristics 142 6.3.9 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. 6.3.10 FSMC characteristics Unless otherwise specified, the parameters given in Table 41 to Table 56 for the FSMC interface are derived from tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage conditions summarized in Table 18 with the following configuration: Output speed is set to OSPEEDRy[1:0] = 11 Capacitive load C = 30 pF Measurement points are done at CMOS levels: 0.5VDD Refer to Section 6.3.14: I/O port characteristics: for more details on the input/output characteristics. Table 39. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design, not tested in production. Unit tprog 16-bit programming time TA–40 to +105 °C 40 53.5 60 µs tERASE Page (2 KB) erase time TA –40 to +105 °C 20 - 40 ms tME Mass erase time TA –40 to +105 °C 20 - 40 ms IDD Supply current Write mode - - 10 mA Erase mode - - 12 mA Table 40. Flash memory endurance and data retention Symbol Parameter Conditions Value Unit Min(1) 1. Data based on characterization results, not tested in production. NEND Endurance TA = –40 to +85 °C (6 suffix versions) TA = –40 to +105 °C (7 suffix versions) 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 30 Years 1 kcycle(2) at TA = 105 °C 10 10 kcycle(2) at TA = 55 °C 20 |
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