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STM32F398VE
Electrical characteristics
142
6.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
6.3.10
FSMC characteristics
Unless otherwise specified, the parameters given in Table 41 to Table 56 for the FSMC
interface are derived from tests performed under the ambient temperature, fHCLK frequency
and VDD supply voltage conditions summarized in Table 18 with the following configuration:
Output speed is set to OSPEEDRy[1:0] = 11
Capacitive load C = 30 pF
Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.14: I/O port characteristics: for more details on the input/output
characteristics.
Table 39. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design, not tested in production.
Unit
tprog
16-bit programming time TA–40 to +105 °C
40
53.5
60
µs
tERASE Page (2 KB) erase time
TA –40 to +105 °C
20
-
40
ms
tME
Mass erase time
TA –40 to +105 °C
20
-
40
ms
IDD
Supply current
Write mode
-
-
10
mA
Erase mode
-
-
12
mA
Table 40. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1. Data based on characterization results, not tested in production.
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2. Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
10
10 kcycle(2) at TA = 55 °C
20



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