STM32F070RB datasheet(41/83 Pages) STMICROELECTRONICS

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DocID027114 Rev 3

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STM32F070CB/RB/C6/F6

Electrical characteristics

6.3.4

Embedded reference voltage

The parameters given in Table 23 are derived from tests performed under the ambient

temperature and supply voltage conditions summarized in Table 20: General operating

conditions.

6.3.5

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 10: Current consumption

measurement scheme.

All Run-mode current consumption measurements given in this section are performed with a

reduced code that gives a consumption equivalent to CoreMark code.

VPDRhyst

PDR hysteresis

tRSTTEMPO(4) Reset temporization

1.50

2.50

4.50

1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector

monitors only VDD.

2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.

3. Data based on characterization results, not tested in production.

4. Guaranteed by design, not tested in production.

Table 22. Embedded reset and power control block characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 23. Embedded internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference

voltage

-40°C < TA < +85°C

1.2

1.23

1.25

tSTART

ADC_IN17 buffer startup

time

10(1)

µs

tS_vrefint

ADC sampling time when

reading the internal

reference voltage

4 (1)

µs

ΔVREFINT

Internal reference

voltage spread over the

temperature range

VDDA = 3 V

10(1)

1. Guaranteed by design, not tested in production.

TCoeff

Temperature coefficient

-100(1)

100(1) ppm/°C

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