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STM32F048C6 STM32F048G6 STM32F048T6
Electrical characteristics
83
6.3.3
Embedded reference voltage
The parameters given in Table 22 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 20: General operating
conditions
.
6.3.4
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 10: Current consumption
measurement scheme
.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to CoreMark code.
Table 21. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
Max
Unit
tVDD
VDD rise time rate
-
0
µs/V
VDD fall time rate
20
tVDDA
VDDA rise time rate
-
0
VDDA fall time rate
20
Table 22. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage –40 °C < TA < +105 °C
1.2
1.23
1.25
V
tSTART
ADC_IN17 buffer startup
time
--
-
10(1)
µs
tS_vrefint
ADC sampling time when
reading the internal
reference voltage
-
4(1)
1. Guaranteed by design, not tested in production.
--
µs
∆VREFINT
Internal reference voltage
spread over the
temperature range
VDDA = 3 V
-
-
10(1)
mV
TCoeff
Temperature coefficient
-
- 100(1)
-
100(1) ppm/°C
TVREFINT_RDY
(2)
2. Guaranteed by design, not tested in production. This parameter is the latency between the time when pin
NPOR is set to 1 by the application and the time when the VREFINTRDYF status bit is set to 1 by the
hardware.
Internal reference voltage
temporization
-
1.5
2.5
4.5
ms



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