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STM32F048T6 bảng dữ liệu(PDF) 42 Page - STMicroelectronics

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STM32F048T6 bảng dữ liệu(HTML) 42 Page - STMicroelectronics

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Electrical characteristics
STM32F048C6 STM32F048G6 STM32F048T6
42/98
DocID026007 Rev 6
6.3
Operating conditions
6.3.1
General operating conditions
6.3.2
Operating conditions at power-up / power-down
The parameters given in Table 21 are derived from tests performed under the ambient
temperature condition summarized in Table 20.
Table 20. General operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
fHCLK
Internal AHB clock frequency
-
0
48
MHz
fPCLK
Internal APB clock frequency
-
0
48
VDD
Standard operating voltage
-
1.65
1.95
V
VDDIO2
I/O supply voltage
Must not be supplied if VDD
is not present
1.65
3.6
V
VDDA
Analog operating voltage
(ADC not used)
Must have a potential equal
to or higher than VDD
VDD
3.6
V
Analog operating voltage
(ADC used)
2.4
3.6
VBAT
Backup operating voltage
-
1.65
3.6
V
VIN
I/O input voltage
TC and RST I/O
–0.3
VDDIOx+0.3
V
TTa and POR I/O
–0.3
VDDA+0.3(1)
FT and FTf I/O
–0.3
5.2(1)
PD
Power dissipation at TA = 85 °C
for suffix 6 or TA = 105 °C for
suffix 7(2)
UFQFPN48
-
606
mW
WLCSP36
-
313
UFQFPN28
-
170
TA
Ambient temperature for the
suffix 6 version
Maximum power dissipation
–40
85
°C
Low power dissipation(3)
–40
105
Ambient temperature for the
suffix 7 version
Maximum power dissipation
–40
105
°C
Low power dissipation(3)
–40
125
TJ
Junction temperature range
Suffix 6 version
–40
105
°C
Suffix 7 version
–40
125
1. For operation with a voltage higher than VDDIOx + 0.3 V, the internal pull-up resistor must be disabled.
2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. See Section 7.4: Thermal characteristics.
3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.4:
Thermal characteristics
).



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