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STM8S003F3 bảng dữ liệu(PDF) 62 Page - STMicroelectronics |
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STM8S003F3 bảng dữ liệu(HTML) 62 Page - STMicroelectronics |
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62 / 104 page ![]() Electrical characteristics STM8S003F3 STM8S003K3 62/104 DocID018576 Rev 9 Figure 18. HSE oscillator circuit diagram Table 33. HSE oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSE External high speed oscillator frequency -1 - 16 MHz RF Feedback resistor - - 220 - k Ω C(1) Recommended load capacitance (2) -- - 20 pF IDD(HSE) HSE oscillator power consumption C = 20 pF, fOSC = 16 MHz -- 6 (startup) 1.6 (stabilized)(3) mA C = 10 pF, fOSC = 16 MHz -- 6 (startup) 1.2 (stabilized)(3) gm Oscillator transconductance - 5 - - mA/V tSU(HSE)(4) Startup time VDD is stabilized - 1 - ms 1. C is approximately equivalent to 2 x crystal Cload. 2. The oscillator selection can be optimized in terms of supply current using a high quality resonator with small Rm value. Refer to crystal manufacturer for more details 3. Data based on characterization results. 4. tSU(HSE) is the start-up time measured from the moment it is enabled (by software) to a stabilized 16 MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer. |
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