STM8L151F3 datasheet(78/122 Pages) STMICROELECTRONICS

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Electrical parameters

STM8L151x2, STM8L151x3

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DocID018780 Rev 9

9.3.5

Memory characteristics

TA = -40 to 125 °C unless otherwise specified.

Flash memory

Table 34. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode (1)

1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware

registers (only in Halt mode). Guaranteed by characterization results.

Halt mode (or Reset)

1.65

Table 35. Flash program and data EEPROM memory

Symbol

Parameter

Conditions

Min

Typ

Max

(1)

Unit

VDD

Operating voltage

(all modes, read/write/erase)

fSYSCLK = 16 MHz

1.65

3.6

tprog

Programming time for 1 or 64 bytes (block)

erase/write cycles (on programmed byte)

Programming time for 1 to 64 bytes (block)

write cycles (on erased byte)

Iprog

Programming/ erasing consumption

TA=+25 °C, VDD = 3.0 V

0.7

TA=+25 °C, VDD = 1.8 V

0.7

tRET(2)

Data retention (program memory) after 10000

erase/write cycles at TA= –40 to +85 °C

(3 and 6 suffix)

TRET = +85 °C

30(1)

years

Data retention (program memory) after 10000

erase/write cycles at TA= –40 to +125 °C

(3 suffix)

TRET = +125 °C

5(1)

Data retention (data memory) after 300000

erase/write cycles at TA= –40 to +85 °C

(3 and 6 suffix)

TRET = +85 °C

30(1)

Data retention (data memory) after 300000

erase/write cycles at TA= –40 to +125 °C

(3 suffix)

TRET = +125 °C

5(1)

NRW (3)

Erase/write cycles (program memory)

TA = –40 to +85 °C

(3 and 6 suffix),

TA = –40 to +105 °C

(3 suffix) or

TA = –40 to +125 °C

(3 suffix)

10(1)

kcycles

Erase/write cycles (data memory)

300(1)

(4)

1. Guaranteed by characterization results.

2. Conforming to JEDEC JESD22a117

3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation

addresses a single byte.

4. Data based on characterization performed on the whole data memory.

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