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ST7MC1K2-Auto bảng dữ liệu(PDF) 351 Page - STMicroelectronics |
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ST7MC1K2-Auto bảng dữ liệu(HTML) 351 Page - STMicroelectronics |
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351 / 371 page ![]() Obsolete Product(s) - Obsolete Product(s) ST7MC1K2-Auto, ST7MC1K6-Auto, ST7MC2S4-Auto, ST7MC2S6-Auto Electrical characteristics 351/371 Figure 162. ADC accuracy characteristics 1. ADC accuracy vs. Negative injection current: For IINJ- = 0.8mA, the typical leakage induced inside the die is 1.6µA and the effect on the ADC accuracy is a loss of 4 LSB for each 10K Ω increase of the external analog source impedance. This effect on the ADC accuracy has been observed under worst-case conditions for injection: - negative injection - injection to an input with analog capability, adjacent to the enabled analog input - at 5V VDD supply, and worst case temperature. 2. Data based on characterization results with TA =25°C. 3. Data based on characterization results over the whole temperature range, monitored in production. EO EG 1LSBIDEAL 1LSB IDEAL V DDA V SSA – 1024 ----------------------------------------- = Vin (LSBIDEAL) (1) Example of an actual transfer curve (2) The ideal transfer curve (3) End point correlation line ET = Total unadjusted error: maximum deviation between the actual and the ideal transfer curves. EO = Offset error: deviation between the first actual transition and the first ideal one. EG = Gain error: deviation between the last ideal transition and the last actual one. ED = Differential linearity error: maximum deviation between actual steps and the ideal one. EL = Integral linearity error: maximum deviation between any actual transition and the end point correlation line. Digital result ADCDR 1023 1022 1021 5 4 3 2 1 0 7 6 1 234567 1021 1022 1023 1024 (1) (2) ET ED EL (3) VAREF VSSA Obsolete Product(s) - Obsolete Product(s) |
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