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ST7MC1K2-Auto bảng dữ liệu(PDF) 329 Page - STMicroelectronics

tên linh kiện ST7MC1K2-Auto
Giải thích chi tiết về linh kiện  Clock, reset and supply management
PDF  371 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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ST7MC1K2-Auto bảng dữ liệu(HTML) 329 Page - STMicroelectronics

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Electrical characteristics
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12.8
I/O port pin characteristics
12.8.1
General characteristics
Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified.
Table 209.
General characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input low level voltage
CMOS ports
0.3 x VDD
V
VIH
Input high level voltage
0.7 x VDD
Vhys
Schmitt trigger voltage hysteresis(1)
1
VIL
Input low level voltage
G and H ports
0.8
VIH
Input high level voltage
2.8
Vhys
Schmitt trigger voltage hysteresis(1)
400
mV
IINJ(PIN)
(2)
Injected current on an I/O
VDD =5V
+5/-2
mA
ΣI
INJ(PIN)
(2) Total injected current (sum of all I/O
and control pins)
± 25
IL
Input leakage current
VSS < VIN < VDD
±1
µA
IS
Static current consumption induced by
each floating input pin(3)
Floating input mode
200
RPU
Weak pull-up equivalent resistor(4)
VIN =VSS
50
90
250
k
CIO
I/O pin capacitance
5
pF
tf(IO)out
Output high to low level fall time(5)
CL = 50pF
Between 10% and 90%
25
ns
tr(IO)out
Output low to high level rise time(5)
25
tw(IT)in
External interrupt pulse time(6)
1tCPU
1.
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
2.
IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum cannot be
respected, the injection current must be limited externally to the IINJ(PIN) value. A positive injection is induced by VIN>VDD
while a negative injection is induced by VIN<VSS. Refer to Section 12.2.2: Current characteristics on page 314 for more
details.
3.
Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for
example or an external pull-up or pull-down resistor (see Figure 139). Static peak current value taken at a fixed VIN value,
based on design simulation and technology characteristics, not tested in production. This value depends on VDD and
temperature values.
4.
The RPU pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics described in
Figure 140). This data is based on characterization results, tested in production at VDD max.
5.
Data based on characterization results, not tested in production.
6.
To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external
interrupt source.
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