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ST7MC1K2-Auto bảng dữ liệu(PDF) 329 Page - STMicroelectronics |
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ST7MC1K2-Auto bảng dữ liệu(HTML) 329 Page - STMicroelectronics |
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329 / 371 page ![]() Obsolete Product(s) - Obsolete Product(s) ST7MC1K2-Auto, ST7MC1K6-Auto, ST7MC2S4-Auto, ST7MC2S6-Auto Electrical characteristics 329/371 12.8 I/O port pin characteristics 12.8.1 General characteristics Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified. Table 209. General characteristics Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage CMOS ports 0.3 x VDD V VIH Input high level voltage 0.7 x VDD Vhys Schmitt trigger voltage hysteresis(1) 1 VIL Input low level voltage G and H ports 0.8 VIH Input high level voltage 2.8 Vhys Schmitt trigger voltage hysteresis(1) 400 mV IINJ(PIN) (2) Injected current on an I/O VDD =5V +5/-2 mA ΣI INJ(PIN) (2) Total injected current (sum of all I/O and control pins) ± 25 IL Input leakage current VSS < VIN < VDD ±1 µA IS Static current consumption induced by each floating input pin(3) Floating input mode 200 RPU Weak pull-up equivalent resistor(4) VIN =VSS 50 90 250 k Ω CIO I/O pin capacitance 5 pF tf(IO)out Output high to low level fall time(5) CL = 50pF Between 10% and 90% 25 ns tr(IO)out Output low to high level rise time(5) 25 tw(IT)in External interrupt pulse time(6) 1tCPU 1. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested. 2. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. Refer to Section 12.2.2: Current characteristics on page 314 for more details. 3. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or an external pull-up or pull-down resistor (see Figure 139). Static peak current value taken at a fixed VIN value, based on design simulation and technology characteristics, not tested in production. This value depends on VDD and temperature values. 4. The RPU pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics described in Figure 140). This data is based on characterization results, tested in production at VDD max. 5. Data based on characterization results, not tested in production. 6. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external interrupt source. Obsolete Product(s) - Obsolete Product(s) |
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