ST7MC1K2-Auto datasheet(325/371 Pages) STMICROELECTRONICS

325 / 371 page

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Electrical characteristics

325/371

12.6.2

Flash memory

12.7

EMC characteristics

Susceptibility tests are performed on a sample basis during product characterization.

12.7.1

Functional EMS (electro magnetic susceptibility)

Based on a simple running application on the product (toggling two LEDs through I/O ports),

the product is stressed by two electro magnetic events until a failure occurs (indicated by the

LEDs).

●

ESD: Electro-static discharge (positive and negative) is applied on all pins of the device

until a functional disturbance occurs. This test conforms with the IEC 1000-4-2

standard.

●

FTB: A Burst of fast transient voltage (positive and negative) is applied to VDD and VSS

through a 100pF capacitor, until a functional disturbance occurs. This test conforms

with the IEC 1000-4-4 standard.

A device reset allows normal operations to be resumed. The test results are given in the

table below based on the EMS levels and classes defined in application note AN1709.

Table 204.

Dual voltage HDFlash memory

Symbol

Parameter

Conditions

Min(1)

Data based on characterization results, not tested in production.

Typ

Max(1)

Unit

fCPU

Operating frequency

Read mode

MHz

Write/Erase mode

VPP

Programming voltage(2)

VPP must be applied only during the programming or erasing operation and not permanently for reliability

reasons.

4.5V < VDD < 5.5V

11.4

12.6

IPP

VPP current

(3)(4)

Data based on simulation results, not tested in production

In Write/Erase mode the IDD supply current consumption is the same as in Run mode (Section 12.4.1: Run

and slow modes (Flash devices) on page 317)

Read (VPP = 12V)

200

µA

Write/Erase

tVPP

Internal VPP stabilization time

µs

tRET

Data retention

TA = 85°C

years

TA = 105°C

TA = 125°C

NRW

Write erase cycles

TA = 25°C

100

cycles

TPROG

TERASE

Programming or erasing

temperature range

-40

°C

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