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ASP0905 bảng dữ liệu(PDF) 49 Page - Texas Instruments |
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ASP0905 bảng dữ liệu(HTML) 49 Page - Texas Instruments |
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49 / 128 page ![]() MSP430F5529, MSP430F5528, MSP430F5527, MSP430F5526 MSP430F5525, MSP430F5524, MSP430F5522, MSP430F5521 MSP430F5519, MSP430F5517, MSP430F5515, MSP430F5514, MSP430F5513 www.ti.com SLAS590M – MARCH 2009 – REVISED NOVEMBER 2015 5.48 Flash Memory over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) TEST PARAMETER MIN TYP MAX UNIT CONDITIONS DVCC(PGM,ERASE) Program and erase supply voltage 1.8 3.6 V IPGM Average supply current from DVCC during program(1) 3 5 mA IERASE Average supply current from DVCC during erase(1) 6 11 mA Average supply current from DVCC during mass erase or bank IMERASE, IBANK 6 11 mA erase(1) tCPT Cumulative program time See (2) 16 ms Program and erase endurance 104 105 cycles tRetention Data retention duration TJ = 25°C 100 years tWord Word or byte program time See (3) 64 85 µs tBlock, 0 Block program time for first byte or word See (3) 49 65 µs Block program time for each additional byte or word, except for last tBlock, 1–(N–1) See (3) 37 49 µs byte or word tBlock, N Block program time for last byte or word See (3) 55 73 µs Erase time for segment, mass erase, and bank erase when tErase See (3) 23 32 ms available. MCLK frequency in marginal read mode fMCLK,MRG 0 1 MHz (FCTL4.MRG0 = 1 or FCTL4.MRG1 = 1) (1) Default clock system frequency of MCLK = 1 MHz, ACLK = 32768 Hz, SMCLK = 1 MHz. No peripherals are enabled or active. (2) The cumulative program time must not be exceeded when writing to a 128-byte flash block. This parameter applies to all programming methods: individual word- or byte-write and block-write modes. (3) These values are hardwired into the state machine of the flash controller. 5.49 JTAG and Spy-Bi-Wire Interface over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) TEST PARAMETER MIN TYP MAX UNIT CONDITIONS fSBW Spy-Bi-Wire input frequency 2.2 V, 3 V 0 20 MHz tSBW,Low Spy-Bi-Wire low clock pulse duration 2.2 V, 3 V 0.025 15 µs Spy-Bi-Wire enable time (TEST high to acceptance of first clock tSBW, En 2.2 V, 3 V 1 µs edge)(1) tSBW,Rst Spy-Bi-Wire return to normal operation time 15 100 µs 2.2 V 0 5 fTCK TCK input frequency, 4-wire JTAG(2) MHz 3 V 0 10 Rinternal Internal pulldown resistance on TEST 2.2 V, 3 V 45 60 80 k Ω (1) Tools that access the Spy-Bi-Wire interface must wait for the tSBW,En time after pulling the TEST/SBWTCK pin high before applying the first SBWTCK clock edge. (2) fTCK may be restricted to meet the timing requirements of the module selected. Copyright © 2009–2015, Texas Instruments Incorporated Specifications 49 Submit Documentation Feedback Product Folder Links: MSP430F5529 MSP430F5528 MSP430F5527 MSP430F5526 MSP430F5525 MSP430F5524 MSP430F5522 MSP430F5521 MSP430F5519 MSP430F5517 MSP430F5515 MSP430F5514 MSP430F5513 |
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