Characteristics

STPS40M120C

2/9

Doc ID 022916 Rev 1

1

Characteristics

When the two diodes 1 and 2 are used simultaneously:

ΔT

Table 2.

otherwise specified)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

120

V

30

A

Average forward current,

δ = 0.5

Per diode

20

A

Per device

40

Surge non repetitive forward current

220

A

(1)

1.

For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy

measurements and diode validation in the avalanche are provided in the STMicroelectronics Application

notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement

using Schottky rectifier avalanche specification”.

Repetitive peak avalanche power

1600

W

(2)

2.

See Figure 9

Maximum repetitive peak

avalanche voltage

150

V

VASM

(2)

Maximum single-pulse

peak avalanche voltage

150

V

Storage temperature range

-65 to +175

°C

3.

condition to avoid thermal runaway for a diode on its own heatsink

150

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

Per diode

1.10

°C/W

Total

0.80

Coupling

0.50

dPtot

dTj

<

1

Rth(j-a)