110N10F7 datasheet(3/15 Pages) STMICROELECTRONICS

tên linh kiện	110N10F7

Giải thích chi tiết về linh kiện	High avalanche ruggedness

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3 / 15 page

DocID024004 Rev 4

3/15

STL110N10F7

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

100

VGS

Gate-source voltage

± 20

(1)

This value is rated according to Rthj-c.

Drain current (continuous) at TC = 25 °C

107

(1)

Drain current (continuous) at TC = 100 °C

(2)

This value is rated according to Rthj-pcb.

Drain current (continuous) at Tpcb = 25 °C

(2)

Drain current (continuous) at Tpcb=100 °C

IDM

(2)(3)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

(1)

Total dissipation at TC = 25 °C

136

PTOT

(2)

Total dissipation at Tpcb = 25 °C

4.8

EAS

(4)

Starting Tj=25 °C, Id=18 A, Vdd=50 V

Single pulse avalanche energy

490

Tstg

Operating junction temperature

Storage temperature

-55 to 175

°C

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

1.1

°C/W

Rthj-pcb

(1)

When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec

Thermal resistance junction-pcb

31.3

°C/W

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