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STGWA15M120DF3 bảng dữ liệu(PDF) 5 Page - STMicroelectronics |
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STGWA15M120DF3 bảng dữ liệu(HTML) 5 Page - STMicroelectronics |
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5 / 19 page ![]() DocID026222 Rev 2 5/19 STGW15M120DF3, STGWA15M120DF3 Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 600 V, IC = 15 A, VGE = 15 V, RG= 22 Ω see Figure 29 -26 - ns tr Current rise time - 12 - ns (di/dt)on Turn-on current slope - 1000 - A/µs td(off) Turn-off delay time - 122 - ns tf Current fall time - 163 - ns Eon (1) 1. Energy losses include reverse recovery of the diode. Turn-on switching losses - 0.55 - mJ Eoff (2) 2. Turn-off losses include also the tail of the collector current. Turn-off switching losses - 0.85 - mJ Ets Total switching losses - 1.4 - mJ td(on) Turn-on delay time VCE = 600 V, IC = 15 A, RG= 22 Ω, VGE = 15 V, TJ = 175 °C, see Figure 29 -25 - ns tr Current rise time - 14 - ns (di/dt)on Turn-on current slope - 857 - A/µs td(off) Turn-off delay time - 136 - ns tf Current fall time - 270 - ns Eon (1) Turn-on switching losses - 1.1 - mJ Eoff (2) Turn-off switching losses - 1.13 - mJ Ets Total switching losses - 2.23 - mJ tsc Short-circuit withstand time VCC ≤ 600V, VGE= 15V, TJstart= 150°C 10 - µs Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 15 A, VR = 600 V, VGE = 15 V, see Figure 29 di/dt = 1000 A/µs - 270 - ns Qrr Reverse recovery charge - 0.96 - µC Irrm Reverse recovery current - 15 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 935 - A/µs Err Reverse recovery energy - 0.18 - mJ trr Reverse recovery time IF = 15 A, VR = 600 V, VGE = 15 V, TJ = 175 °C, see Figure 29 di/dt = 1000 A/µs - 534 - ns Qrr Reverse recovery charge - 3.45 - µC Irrm Reverse recovery current - 23 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 266 - A/µs Err Reverse recovery energy - 0.55 - mJ |
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