STGWA15M120DF3 datasheet(3/19 Pages) STMICROELECTRONICS

tên linh kiện	STGWA15M120DF3

Giải thích chi tiết về linh kiện	Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

PDF	19 Pages

Scroll/Zoom	100%

nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

Logo

3 / 19 page

DocID026222 Rev 2

3/19

STGW15M120DF3, STGWA15M120DF3

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

1200

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

ICP

(1)

Pulse width limited by maximum junction temperature.

Pulsed collector current

VGE

Gate-emitter voltage

±20

Continuous forward current at TC = 25 °C

Continuous forward current at TC = 100 °C

IFP

(1)

Pulsed forward current

PTOT

Total dissipation at TC = 25 °C

259

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature

- 55 to 175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.58

°C/W

RthJC

Thermal resistance junction-case diode

1.3

°C/W

RthJA

Thermal resistance junction-ambient

°C/W

STGWA15M120DF3 bảng dữ liệu(PDF) 3 Page - STMicroelectronics

STGWA15M120DF3 bảng dữ liệu(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

bảng dữ liệu tải về

Link URL