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STGFW30V60DF bảng dữ liệu(PDF) 8 Page - STMicroelectronics

tên linh kiện STGFW30V60DF
Giải thích chi tiết về linh kiện  Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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STGFW30V60DF bảng dữ liệu(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STGFW30V60DF
8/15
DocID026149 Rev 1
Figure 14. Switching losses vs. collector
current
Figure 15. Switching losses vs. gate resistance
Figure 16. Switching losses vs. junction
temperature
Figure 17. Switching losses vs. collector
emitter voltage
Figure 18. Switching times vs. collector current
Figure 19. Switching times vs. gate resistance
E(μJ)
0
0
IC(A)
400
10
20
200
600
30
40
VCC=400V, VGE=15V
Rg=10Ω, Tj=175°C
800
1000
1200
1400
Eon
Eoff
50
60
1600
1800
2000
AM17423v1
E(μJ)
0
Rg(Ω)
400
10
20
200
600
30
40
VCC=400V, VGE=15V
IC=30A, Tj=175°C
800
1000
1200
Eon
Eoff
AM17424v1
E(μJ)
25
TJ(°C)
200
50
75
100
300
100
125
VCC=400V, VGE=15V
IC=30A, Rg=10Ω
400
500
600
Eon
Eoff
150
0
700
800
AM17425v1
E(μJ)
150
VCE(V)
500
200
250
100
900
300
350
VGE=15V, Tj=175°C
IC=30A, Rg=10Ω
Eon
Eoff
300
700
1100
400
450
AM17426v1
t(ns)
0
IC(A)
10
20
10
30
40
VCC=400V,
Tj=175°C,
VGE=15V
Rg=10Ω
tdoff
tdon
100
tf
tr
50
60
AM17427v1
t(ns)
0
Rg(Ω)
10
20
10
30
40
VCC=400V,
Tj=175°C,
VGE=15V
IC=30A
tdoff
tdon
100
tr
tf
1000
AM17428v1



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