Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. C (2) G (1) E (3) TO-3PF 1 1 2 3

Features
■ Maximum junction temperature: TJ = 175 °C
■ Tail-less switching off
■ VCE(sat) = 1.85 V (typ.) @ IC = 30 A
■ Tight parameters distribution
■ Safe paralleling
■ Low thermal resistance
■ Very fast soft recovery antiparallel diode

Applications
■ Photovoltaic inverters
■ Uninterruptible power supply
■ Welding
■ Power factor correction
■ Very high frequency converters