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STGFW20V60DF bảng dữ liệu(PDF) 5 Page - STMicroelectronics

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STGFW20V60DF bảng dữ liệu(HTML) 5 Page - STMicroelectronics

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STGFW20V60DF
Electrical characteristics
DocID026148 Rev 2
5/15
Table 6: IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 20 A,
VGE = 15 V
(see Figure 27: " Test circuit
for inductive load switching" )
-
38
-
ns
tr
Current rise time
-
10
-
ns
(di/dt)on
Turn-on current slope
-
1556
-
A/µs
td(off)
Turn-off-delay time
-
149
-
ns
tf
Current fall time
-
15
-
ns
Eon(1)
Turn-on switching energy
-
200
-
µJ
Eoff(2)
Turn-off switching energy
-
130
-
µJ
Ets
Total switching energy
-
330
-
µJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 20 A,
VGE = 15 V, TJ = 175 °C
(see Figure 27: " Test circuit
for inductive load switching" )
-
37
-
ns
tr
Current rise time
-
12
-
ns
(di/dt)on
Turn-on current slope
-
1340
-
A/µs
td(off)
Turn-off-delay time
-
150
-
ns
tf
Current fall time
-
23
-
ns
Eon(1)
Turn-on switching energy
-
430
-
µJ
Eoff(2)
Turn-off switching energy
-
210
-
µJ
Ets
Total switching energy
-
640
-
µJ
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 20 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs
(see Figure 27: " Test circuit
for inductive load switching")
-
40
ns
Qrr
Reverse recovery charge
-
320
nC
Irrm
Reverse recovery current
-
16
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
910
A/µs
Err
Reverse recovery energy
-
115
µJ
trr
Reverse recovery time
IF = 20 A, VR = 400 V,
VGE = 15 V, TJ = 175 °C,
di/dt = 1000 A/µs
(see Figure 27: " Test circuit
for inductive load switching")
-
72
ns
Qrr
Reverse recovery charge
-
930
nC
Irrm
Reverse recovery current
-
26
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
530
A/µs
Err
Reverse recovery energy
-
307
µJ



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