STGFW20V60DF datasheet(1/15 Pages) STMICROELECTRONICS

tên linh kiện	STGFW20V60DF

Giải thích chi tiết về linh kiện	Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

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February 2017

DocID026148 Rev 2

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This is information on a product in full production.

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STGFW20V60DF

Trench gate field-stop IGBT, V series

600 V, 20 A very high speed

Datasheet - production data

Figure 1: Internal schematic diagram

Features



Maximum junction temperature: TJ = 175 °C



Very high speed switching series



Tail-less switching off



VCE(sat) = 1.8 V (typ.) @ IC = 20 A



Tight parameters distribution



Safe paralleling



Low thermal resistance



Very fast soft recovery antiparallel diode



Lead free package

Applications



Photovoltaic inverters



Uninterruptible power supply



Welding



Power factor correction



Very high frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the V series

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, the positive VCE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGFW20V60DF

G20V60DF

TO-3PF

Tube

1

2

3

TO-3PF

C (2)

G (1)

E (3)

Sc12850_no_tab

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STGFW20V60F	1Mb / 19P	600 V, 20 A very high speed trench gate field-stop IGBT 11-Jul-2013

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Mô tả tương tự - STGFW20V60DF

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	STGFW20V60F	1Mb / 19P	600 V, 20 A very high speed trench gate field-stop IGBT 11-Jul-2013
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	STGFW40V60DF	1Mb / 21P	Trench gate field-stop IGBT, V series 600 V, 40 A very high speed 23-Apr-2014
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	STGW40V60DLF	1Mb / 17P	Trench gate field-stop IGBT, V series 600 V, 40 A very high speed 21-Oct-2013
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