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STGAP1S bảng dữ liệu(PDF) 31 Page - STMicroelectronics

tên linh kiện STGAP1S
Giải thích chi tiết về linh kiện  gapDRIVE™: galvanically isolated single gate driver
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STGAP1S bảng dữ liệu(HTML) 31 Page - STMicroelectronics

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STGAP1S
Functional description
67
Figure 11. DESAT protection timing diagram
A deglitch filter is applied to the DESAT pin. Each pulse exceeding the VDESATth for a time
shorter than tDESfilter value shall not trigger the protection.
7.7
VCE active clamping protection
This protection is used to actively clamp the drain/collector overvoltage spikes during the
MOSFET/IGBT turn-off. This feature allows using low turn-off resistor values leading lower
turn-off losses, thus increasing efficiency, while limiting the maximum turn-off spike on the
collector (or drain) within safe limits.
The direct feedback of the collector voltage to the device can for example be made via an
element with avalanche characteristics such as a TVS. If the VCE voltage exceeds the
breakdown voltage of the TVS, the VVCECLth threshold voltage on the VCECLAMP is
reached and the IC actively slows down the power switch turn-off to keep a safe condition.
The active limiting of the driver's turn-off current strongly reduces the current flowing
through the TVS, thus preventing it from operating in overstressing conditions.
DESAT
VH level
DiagX
VL level
Blanking time
Comparator Disabled
Comparator Disabled
Comparator Enabled
tBLK
tDESAT
IN+
VDESATth
GON-GOFF
tDIAGx



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