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STFW42N60M2-EP bảng dữ liệu(PDF) 5 Page - STMicroelectronics

tên linh kiện STFW42N60M2-EP
Giải thích chi tiết về linh kiện  N-channel 600 V, 0.076 ??typ., 34 A MDmesh™M2 EP Power MOSFETs in TO-220FP and TO-3PF packages
PDF  16 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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STFW42N60M2-EP bảng dữ liệu(HTML) 5 Page - STMicroelectronics

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STF42N60M2-EP, STFW42N60M2-EP
Electrical characteristics
16
Table 8. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD =300 V, ID =17 A,
RG =4.7 Ω, VGS =10V
(see Figure 17 and
Figure 22)
-
16.5
-
ns
tr
Rise time
-
9.5
-
ns
td(off)
Turn-off-delay time
-
96.5
-
ns
tf
Fall time
-
8
-
ns
Table 9. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
34
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
136
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 34 A, VGS = 0
-
1.6
V
trr
Reverse recovery time
ISD = 34 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 22)
-
438
ns
Qrr
Reverse recovery charge
-
9
µC
IRRM
Reverse recovery current
-
41.5
A
trr
Reverse recovery time
ISD = 34 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 22)
-
538
ns
Qrr
Reverse recovery charge
-
12
µC
IRRM
Reverse recovery current
-
44.5
A



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