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STFW42N60M2-EP bảng dữ liệu(PDF) 3 Page - STMicroelectronics

tên linh kiện STFW42N60M2-EP
Giải thích chi tiết về linh kiện  N-channel 600 V, 0.076 ??typ., 34 A MDmesh™M2 EP Power MOSFETs in TO-220FP and TO-3PF packages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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STFW42N60M2-EP bảng dữ liệu(HTML) 3 Page - STMicroelectronics

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STF42N60M2-EP, STFW42N60M2-EP
Electrical ratings
16
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220FP
TO-3PF
VGS
Gate-source voltage
± 25
V
ID
(1)
1.
Limited by maximum junction temperature
Drain current (continuous) at TC = 25 °C
34
A
ID
(1)
Drain current (continuous) at TC = 100 °C
22
A
IDM
(1),(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
136
A
PTOT
Total dissipation at TC = 25 °C
40
63
W
dv/dt (3)
3.
ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.
Peak diode recovery voltage slope
15
V/ns
dv/dt(4)
4.
VDS ≤ 480 V
MOSFET dv/dt ruggedness
50
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; TC=25 °C)
2500
3500
V
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220FP
TO-3PF
Rthj-case Thermal resistance junction-case max
3.13
2.00
°C/W
Rthj-amb Thermal resistance junction-ambient max
62.5
50
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
6A
EAS
Single pulse avalanche energy (starting
Tj =25°C, ID =IAR;VDD =50 V)
800
mJ



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