NTHD4N02F datasheet(3/6 Pages) ONSEMI

tên linh kiện	NTHD4N02F

Giải thích chi tiết về linh kiện	Power MOSFET and Schottky Diode

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NTHD4N02F

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TYPICAL MOSFET PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

2 V

100

°C

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

1.5

2.5

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.1

0.05

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (AMPS)

−50

−25

1.5

1.3

1.1

0.9

0.7

125

100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

0.15

TC = −55°C

ID = 2.9 A

TJ = 25°C

0.1

0.04

150

TJ = 25°C

ID = 2.9 A

VGS = 4.5 V

°C

1.7

VGS = 4.5 V

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 0 V

TJ = 100°C

1.4 V

1.6 V

1.8 V

VGS = 2.5 V

100

2.2 V

VDS ≥ 10 V

0.07

610

VGS = 2.4 V

VGS = 5 V to 3 V

910

0.5

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