NTHD4N02F datasheet(2/6 Pages) ONSEMI

2 / 6 page

NTHD4N02F

http://onsemi.com

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State (Note 1)

RqJA

110

°C/W

Junction−to−Ambient – t

v 5 s

RqJA

°C/W

1. Surface Mounted on FR4 Board using 1 in sq. pad size (Cu area = 1.27 in sq.

[1 oz] including traces).

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

TJ = 25°C

1.0

VDS = 16 V

TJ = 85°C

5.0

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = "12 V

"100

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

0.6

1.2

Drain−to−Source On−Resistance

RDS(on)

VGS = 4.5, ID = 2.9 A

0.058

0.080

()

VGS = 2.5, ID = 2.3 A

0.077

0.115

Forward Transconductance

gFS

VDS = 10 V, ID = 2.9 A

6.0

CHARGES AND CAPACITANCES

Input Capacitance

CISS

0V f

10MH

180

300

Output Capacitance

COSS

VGS = 0 V, f = 1.0 MHz,

VDS = 10 V

130

Reverse Transfer Capacitance

CRSS

VDS = 10 V

Total Gate Charge

QG(TOT)

45V V

10 V

2.6

4.0

Gate−to−Source Charge

QGS

VGS = 4.5 V, VDS = 10 V,

ID = 2.9 A

0.6

Gate−to−Drain Charge

QGD

ID = 2.9 A

0.7

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

5.0

Rise Time

VGS = 4.5 V, VDD = 16 V,

9.0

Turn−Off Delay Time

td(OFF)

VGS = 4.5 V, VDD = 16 V,

ID = 2.9 A, RG = 2.5 W

Fall Time

3.0

6.0

DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)

Forward Diode Voltage

VSD

VGS = 0 V, IS = 2.6 A

0.8

1.15

Reverse Recovery Time

tRR

12.5

Charge Time

VGS = 0 V, IS = 2.6 A,

9.0

Discharge Time

VGS = 0 V, IS = 2.6 A,

dIS/dt = 100 A/ms

3.5

Reverse Recovery Charge

QRR

6.0

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Maximum Instantaneous Forward Voltage

IF = 0.1 A

0.31

IF = 1.0 A

0.365

Maximum Instantaneous Reverse Current

VR = 10 V

0.75

VR = 20 V

2.5

Non−Repetitive Peak Surge Current

IFSM

Halfwave, Single Pulse, 60 Hz

2. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

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