IRFBC40 datasheet(5/7 Pages) HARRIS

tên linh kiện	IRFBC40

Giải thích chi tiết về linh kiện	6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs

PDF	7 Pages

Scroll/Zoom	100%

nhà sản xuất	HARRIS [Harris Corporation]

Trang chủ	http://www.harris.com

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5 / 7 page

5-5

IRFBC40, IRFBC42

FIGURE 8. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 10. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 13. TRANSCONDUCTANCE vs DRAIN CURRENT

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

VSD, SOURCE TO DRAIN VOLTAGE (V)

102

0.1

0.3

0.6

0.9

1.2

1.5

TJ = 150

TJ = 25

ID, DRAIN CURRENT (A)

612

030

5.0

4.0

3.0

2.0

VGS = 20V

1.0

VGS = 10V

µs PULSE TEST

3.0

1.8

0.6

-60

TJ, JUNCTION TEMPERATURE (

oC)

2.4

1.2

120

160

-20

-40

100

140

ID = 3.4A

VGS = 10V

1.25

1.05

0.85

-60

TJ, JUNCTION TEMPERATURE (

oC)

1.15

0.95

0.75

-20

100

160

-40

120 140

ID = 250µA

102

VDS, DRAIN TO SOURCE VOLTAGE (V)

3000

2400

1800

1200

600

CRSS

CISS

COSS

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

ID, DRAIN CURRENT (A)

010

µs PULSE TEST

VDS ≥ 100V

TJ = 150

TJ = 25

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