5-3

IRFBC40, IRFBC42

Internal Drain Inductance

Measured From the Drain

Lead, 6mm (0.25in) From

Package to Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

-

4.5

-

nH

Internal Source Inductance

Measured From the

Source Lead, 6mm

(0.25in) From Header to

Source Bonding Pad

-

7.5

-

nH

Thermal Resistance Junction to Case

-

-

1.0

Thermal Resistance Junction to Ambient

Typical Socket Mount

-

-

80

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET

Symbol Showing the

Integral Reverse

P-N Junction Diode

-

-

6.2

A

Pulse Source to Drain Current

(Note 3)

-

-

25

A

Diode Source to Drain Voltage (Note 2)

-

-

1.5

V

Reverse Recovery Time

200

450

940

ns

Reverse Recovery Charge

1.8

3.8

8.0

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

G

D

S

G

D

S

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0

50

100

150

0

0.2

0.4

0.6

0.8

1.0

1.2

50

75

100

25

10

8

6

0

4

2

125

IRFBC40

150

IRFBC42