2SC4617G datasheet(2/4 Pages) ONSEMI

tên linh kiện	2SC4617G

Giải thích chi tiết về linh kiện	NPN Silicon General Purpose Amplifier Transistor

PDF	4 Pages

Scroll/Zoom	100%

nhà sản xuất	ONSEMI [ON Semiconductor]

Trang chủ	http://www.onsemi.com

Logo

2 / 4 page

2SC4617G, S2SC4617G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0)

V(BR)CBO

−

Vdc

Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)

V(BR)CEO

−

Vdc

Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0)

V(BR)EBO

5.0

−

Vdc

Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)

ICBO

−

0.5

Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0)

IEBO

−

0.5

Collector-Emitter Saturation Voltage (Note 2)

(IC = 60 mAdc, IB = 5.0 mAdc)

VCE(sat)

−

0.4

Vdc

DC Current Gain (Note 2)

(VCE = 6.0 Vdc, IC = 1.0 mAdc)

hFE

120

−

560

−

Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)

−

180

−

MHz

Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz)

COB

−

2.0

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width

≤ 300 ms, D.C. ≤ 2%.

2SC4617G bảng dữ liệu(PDF) 2 Page - ON Semiconductor

2SC4617G bảng dữ liệu(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4

bảng dữ liệu tải về

Link URL