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NJVMJD50T4G bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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NJVMJD50T4G bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() MJE2955T (PNP), MJE3055T (NPN) www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) VCEO(sus) 60 − Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO − 700 mAdc Collector Cutoff Current (VCE = 70 Vdc, VEB(off) = 1.5 Vdc) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C) ICEX − − 1.0 5.0 mAdc Collector Cutoff Current (VCB = 70 Vdc, IE = 0) (VCB = 70 Vdc, IE = 0, TC = 150°C) ICBO − − 1.0 10 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 5.0 mAdc ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 4.0 Adc, VCE = 4 0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE 20 5.0 100 − − Collector−Emitter Saturation Voltage (Note 2) (IC = 4.0 Adc, IB = 0.4 Adc) (IC = 10 Adc, IB = 3.3 Adc) VCE(sat) − − 1.1 8.0 Vdc Base−Emitter On Voltage (Note 2) (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − 1.8 Vdc DYNAMIC CHARACTERISTICS Current−Gain−Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz) fT 2.0 − MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 20%. |
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