NJVMJD50T4G datasheet(1/4 Pages) ONSEMI

tên linh kiện	NJVMJD50T4G

Giải thích chi tiết về linh kiện	High Voltage Power Transistors

PDF	4 Pages

Scroll/Zoom	100%

nhà sản xuất	ONSEMI [ON Semiconductor]

Trang chủ	http://www.onsemi.com

Logo

1 / 4 page

January, 2015 − Rev. 12

1

Publication Order Number:

MJE2955T/D

MJE2955T (PNP),

MJE3055T (NPN)

Complementary Silicon

Plastic Power Transistors

These devices are designed for use in general−purpose amplifier and

switching applications.

Features

• High Current Gain − Bandwidth Product

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

60

Vdc

Collector−Base Voltage

VCB

70

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

Collector Current

IC

10

Adc

Base Current

IB

6.0

Adc

Total Device Dissipation

@ TC = 25°C

Derate above 25

°C

PD

(Note 1)

75

0.6

W

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and

must be observed.

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.67

°C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

10 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60 VOLTS − 75 WATTS

www.onsemi.com

MARKING DIAGRAM

MJExx55T = Device Code

xx = 29 or 30

G

= Pb−Free Package

A

= Assembly Location

Y

= Year

WW

= Work Week

MJExx55TG

AY WW

Device

Package

Shipping

ORDERING INFORMATION

MJE2955TG

TO−220

(Pb−Free)

50 Units / Rail

MJE3055TG

TO−220

(Pb−Free)

50 Units / Rail

1

BASE

EMITTER 3

COLLECTOR 2, 4

1

BASE

EMITTER 3

COLLECTOR 2, 4

PNP

NPN

TO−220

CASE 221A−09

STYLE 1

1

2

3

4

Số phần tương tự - NJVMJD50T4G

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
ON Semiconductor	NJVMJD50T4G	81Kb / 6P	High Voltage Power Transistors August, 2014 ??Rev. 15
ON Semiconductor	NJVMJD50T4G	81Kb / 6P	High Voltage Power Transistors August, 2014 ??Rev. 15

More results

Mô tả tương tự - NJVMJD50T4G

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Boca Semiconductor Corp...	BU126	121Kb / 3P	HIGH VOLTAGE POWER TRANSISTORS
Boca Semiconductor Corp...	BU326	129Kb / 3P	HIGH VOLTAGE POWER TRANSISTORS
TAITRON Components Inco...	TIP47	179Kb / 4P	NPN High Voltage Power Transistors
ON Semiconductor	MJD47	115Kb / 5P	High Voltage Power Transistors January, 2011 ??Rev. 10
	MJD340	126Kb / 5P	High Voltage Power Transistors January, 2011 ??Rev. 8
	MJE4343G	138Kb / 8P	High-Voltage - High Power Transistors May, 2012 ??Rev. 5
Fairchild Semiconductor	MJD350TF	43Kb / 4P	High Voltage Power Transistors
ON Semiconductor	NJVMJD50T4G	81Kb / 6P	High Voltage Power Transistors August, 2014 ??Rev. 15
	MJD340	93Kb / 6P	High Voltage Power Transistors June, 2016 ??Rev. 12
	MJD47	81Kb / 6P	High Voltage Power Transistors August, 2014 ??Rev. 15

More results

NJVMJD50T4G bảng dữ liệu(PDF) 1 Page - ON Semiconductor

NJVMJD50T4G bảng dữ liệu(HTML) 1 Page - ON Semiconductor

Số phần tương tự - NJVMJD50T4G

Mô tả tương tự - NJVMJD50T4G

Html Pages

1 2 3 4

bảng dữ liệu tải về

Link URL