MJD340 datasheet(4/6 Pages) ONSEMI

4 / 6 page

MJD340 (NPN), MJD350 (PNP)

www.onsemi.com

t, TIME (ms)

0.01

0.5

0.2

0.1

0.05

0.02

0.05

100

200

1 k

500

RqJC(t) = r(t) RqJC

RqJC = 8.33°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

0.1

0.5

0.2

Figure 5. Thermal Response

0.03

0.3

300

0.01

1000

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

70 100

200

500

300

500

Figure 6. Active Region Safe Operating Area

200 300

500 700 1000

100

1 ms

100

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150

_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

≤ 150_C. TJ(pk) may be calculated from the data in

Figure 5. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

Figure 7. Power Derating

T, TEMPERATURE (

°C)

100

125

150

2.5

1.5

0.5

TA TC

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