MJD340 datasheet(2/6 Pages) ONSEMI

2 / 6 page

MJD340 (NPN), MJD350 (PNP)

www.onsemi.com

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

8.33

°C/W

Thermal Resistance, Junction−to−Ambient (Note 2)

RqJA

°C/W

Leading Temperature for Soldering Purpose

260

°C

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 1 mA, IB = 0)

VCEO(sus)

300

−

Collector Cutoff Current

(VCB = 300 V, IE = 0)

ICEO

−

0.1

Emitter Cutoff Current

(VBE = 3 V, IC = 0)

IEBO

−

0.1

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 50 mA, VCE = 10 V)

hFE

240

−

Collector−Emitter Saturation Voltage

(IC = 100 mA, IB = 10 mA)

VCE(sat)

−

Base−Emitter On Voltage

(IC = 1 A, VCE = 10 V)

VBE(on)

−

1.5

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

(IC = 50 mA, VCE = 10 V, f = 10 MHz)

−

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

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