HMIC™ Silicon PIN Diode Switches

Rev. V11

MA4SWx10 Series

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Features

 Broad Bandwidth

 Specified from 50 MHz to 20 GHz

 Usable from 50 MHz to 26.5 GHz

 Lower Insertion Loss / Higher Isolation

 Fully Monolithic, Glass Encapsulated Chip

 Up to +33 dBm CW Power Handling @ +25°C

 RoHS* Compliant

Description

The MA4SW110 (SPST), MA4SW210 (SPDT) and

MA4SW310 (SP3T) are series-shunt, broadband,

(Heterolithic Microwave Integrated Circuit) process.

This process allows the silicon pedestals which form

the series - shunt diodes and vias to be embedded

into low loss, low dispersion glass. By also

incorporating

small

spacing

between

circuit

elements, the result is an HMIC chip with low

insertion loss and high isolation at frequencies up to

26.5 GHz.

They are designed for use as moderate power, high

performance

switches

and

provide

superior

performance when compared to similar designs that

use discrete components.

The top side of the chip is protected by a polymer

coating for manual or automatic handling and large

gold bond pads help facilitate connection of low

inductance ribbons. The gold metallization on the

backside of the chip allows for attachment via 80/20,

gold/tin solder or conductive silver epoxy.

Ordering Information

Part Number

Package

MA4SW110

Gel Pack

MA4SW210

Gel Pack

MA4SW310

Gel Pack

*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

J1

J2

J2

J3

J1

J2

J4

J1

J3

MA4SW110 (SPST)

Functional Diagrams

MA4SW210 (SPDT)

MA4SW310 (SP3T)