GaAs Flip Chip

Schottky Barrier Diodes

Rev. V9

MA4EXXXX Series

2

2

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2

Electrical Specifications @ +25°C

Parameters and Test Conditions

Symbol

MA4E1317

MA4E1318

Units

Min.

Typ.

Max.

Min.

Typ.

Max.

Junction Capacitance at 0 V at 1 MHz

Cj

pF

-

.020

-

-

-

Ct

pF

.030

.045

.060

Junction Capacitance Difference

DCj

pF

-

-

-

-

.005

.010

Rs

Ohms

-

4

7

-

4

7

Forward Voltage at +1 mA

Vf1

Volts

.60

.70

.80

.60

.70

.80

Forward Voltage Difference at +1 mA

DVf

Volts

-

-

-

-

.005

.010

Reverse Breakdown Voltage at -10 µA

Vbr

Volts

4.5

7

-

-

-

-

SSB Noise Figure

NF

dB

-

-

-

-

1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.

2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms.

3. Capacitance for the MA4E1318, MA4E2160, MA4E1319-1 or -2 is per Schottky diode.

4. Measured at a LO frequency of 9.375 GHz, with an IF frequency of 300 MHz, LO drive level is +6 dBm for a single Schottky junction. The

IF noise figure contribution (1.5 dB) is included.

Parameters and Test Conditions

Symbol

MA4E1319-1 or -2

MA4E2160

Units

Min.

Typ.

Max.

Min.

Typ.

Max.

Junction Capacitance at 0 V at 1 MHz

Cj

pF

-

-

-

-

Ct

pF

Junction Capacitance Difference

DCj

pF

-

.005

.010

.010

-

.005

Rs

Ohms

-

4

7

7

-

4

Forward Voltage at +1 mA

Vf1

Volts

.60

.70

.80

.80

.60

.70

Forward Voltage Difference at +1 mA

DVf

Volts

-

.005

.010

.010

-

.005

Reverse Breakdown Voltage at -10 µA

Vbr

Volts

4.5

7

-

-

4.5

7

SSB Noise Figure

NF

dB

-

-

-

-