MJD122 datasheet(2/8 Pages) ONSEMI

tên linh kiện	MJD122

Giải thích chi tiết về linh kiện	Complementary Darlington Power Transistor

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MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)

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MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

100

Vdc

Collector−Base Voltage

VCB

100

Vdc

Emitter−Base Voltage

VEB

Vdc

Collector Current

Continuous

Peak

Adc

Base Current

120

mAdc

Total Power Dissipation

@ TC = 25°C

Derate above 25

°C

0.16

°C

Total Power Dissipation (Note 1)

@ TA = 25°C

Derate above 25

°C

1.75

0.014

°C

Operating and Storage Junction Temperature Range

TJ, Tstg

−65 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

6.25

°C/W

Thermal Resistance,

Junction−to−Ambient (Note1)

RqJA

71.4

°C/W

1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

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