công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

MJD122 bảng dữ liệu(PDF) 6 Page - ON Semiconductor

tên linh kiện MJD122
Giải thích chi tiết về linh kiện  Complementary Darlington Power Transistor
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  ONSEMI [ON Semiconductor]
Trang chủ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJD122 bảng dữ liệu(HTML) 6 Page - ON Semiconductor

  MJD122 Datasheet HTML 1Page - ON Semiconductor MJD122 Datasheet HTML 2Page - ON Semiconductor MJD122 Datasheet HTML 3Page - ON Semiconductor MJD122 Datasheet HTML 4Page - ON Semiconductor MJD122 Datasheet HTML 5Page - ON Semiconductor MJD122 Datasheet HTML 6Page - ON Semiconductor MJD122 Datasheet HTML 7Page - ON Semiconductor MJD122 Datasheet HTML 8Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 6 / 8 page
background image
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
www.onsemi.com
6
t, TIME OR PULSE WIDTH (ms)
1
0.01
1000
0.3
0.2
0.07
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.7
0.5
0.1
0.05
0.03
0.02
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1
0.5
3
0.3
0.2
0.7
1
5
IC, COLLECTOR CURRENT (AMP)
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
3
2
0.7
0.5
0.3
0.2
ts
tf
tr
td @ VBE(off) = 0 V
PNP
NPN
Figure 9. Switching Times Test Circuit
Figure 10. Switching Times
0.1
1
10
7
5
2
Figure 11. Thermal Response
V2
APPROX
+8 V
0
≈ 8 k
SCOPE
VCC
-30 V
RC
51
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
25
ms
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
+ 4 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
V1
APPROX
-12 V
TUT
RB
D1
≈ 120
0.07
0.05
0.1
0.01
5
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2
BONDING WIRE LIMIT
THERMAL LIMIT
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
10
50
7
TJ = 150°C
100
m
σ
1ms
dc
0.1
1
3
15
20
30
20
70
CURVES APPLY BELOW RATED VCEO
5ms
Figure 12. Maximum Forward Bias
Safe Operating rea
3
2
1
10
0.05
0.02
0.03
500
m
σ
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 12 is based on TJ(pk) = 150
_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in
Figure 11. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.



Html Pages

1 2 3 4 5 6 7 8


bảng dữ liệu tải về

Go To PDF Page


Link URL



Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Liên kết đến bảng dữ liệu    |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com