| công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
AS5SP512K36 bảng dữ liệu(PDF) 3 Page - Micross Components |
|
|
|||||||||||||||||||||||||||||
AS5SP512K36 bảng dữ liệu(HTML) 3 Page - Micross Components |
|
3 / 12 page ![]() SSRAM AS5SP512K36 AS5SP512K36 Rev. 3.0 10/13 Micross Components reserves the right to change products or specifications without notice. 3 Micross Components AS5SP512K36 Synchronous SRAM is manufactured to support today’s High Performance platforms utilizing the industry’s leading processor elements including those of Intel and Motorola. The AS5SP512K36 supports Synchronous SRAM READ and WRITE operations as well as Synchronous Burst READ/WRITE operations. All inputs with the exception of OE\, MODE and ZZ are synchronous in nature and registered on the rising edge of input clock (CLK). The type, start and duration of Burst Mode operations is controlled by MODE, ADSC\, ADSP\ and ADV\. All synchronous accesses, including the Burst accesses, are enabled via the use of the multiple enable pins, and wait state insertion is supported and controlled via the use of the Address Advance (ADV\). The AS5SP512K36 supports both Interleaved and Linear Burst modes. The AS5SP512K36 supports Byte WRITE operations via the Byte Write Enable (BWE\) and the Byte Write Select pin(s) (BWa\, BWb\, BWc\, BWd\). Global Writes are supported via the Global Write Enable (GW\). Global Write Enable will override the Byte Write inputs and will perform a Write to all 36 Data Bits. The AS5SP512K36 provides ease of producing very dense arrays via the multiple Chip Enable input pins and Asynchronous Output Enable. Single Cycle Access Operations A Single READ operation is initiated at the rising edge of Clock when all of the following conditions are satisfied: [1] ADSP\ or ADSC\ is asserted LOW, [2] Chip Enables are all asserted active, and [3] the WRITE signals (GW\, BWE\) are HIGH. ADSP\ is ignored if CE1\ is HIGH. The address presented to the Address inputs is stored within the Address Registers and Address Counter/Advancement Logic and presented to the array core. The corresponding data of the addressed location is propagated to the Output Registers and passed to the data bus on the next rising clock via the Output Buffers. The time at which the data is presented to the Data bus is as specified by either the Clock to Data valid specification or the Output Enable to Data Valid spec for the device speed grade chosen. The only exception occurs when the device is emerging from a deselected to selected state where its outputs are tristated in the first machine cycle and controlled by its Output Enable (OE\) on following cycle. Consecutive single cycle READS are supported. Once the SRAM is deselected by use of the Chip Enable(s) and either ADSP\ or ADSC\, its outputs will tri-state immediately. A Single ADSP\ controlled WRITE operation is initiated when both of the following conditions are satisfied at the rising edge of Clock: [1] ADSP\ is asserted LOW, and [2] Chip Enable(s) are asserted ACTIVE. The WRITE controls: Global Write, Byte Write Enable (GW\, BWE\) the individual Byte Writes (BWa\, BWb\, BWc\, BWd\), and ADV\ are ignored on the first machine cycle. ADSP\ triggered WRITE accesses require two (2) machine cycles to complete. If Global Write is asserted LOW on the second Clock (CLK) rise, data will be written into the selected address location. If GW\ is HIGH (inactive) then the WRITE operation is controlled by BWE\ and one or more of the Byte Write controls (BWa\, BWb\, BWc\ and BWd\). All WRITES that are initiated in this device are internally self timed. A Single ADSC\ controlled WRITE operation is initiated at the rising edge of Clock when the following conditions are satisfied: [1] ADSC\ is asserted LOW, [2] ADSP\ is de-asserted (HIGH), [3] Chip Enable(s) are asserted (TRUE or Active), and [4] the appropriate combination of the WRITE inputs (GW\, BWE\, BWx\) are asserted (ACTIVE). ADSC\ triggered WRITE accesses require a single clock (CLK) machine cycle to complete. The ADV\ pin is ignored during this cycle. Deep Power-Down Mode (SLEEP) The AS5SP512K36 has a Deep Power-Down mode and is controlled by the Asynchronous ZZ pin. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, Data integrity is guaranteed. For the device to be placed successfully into this operational mode the device must be deselected and the Chip Enables, ADSP\ and ADSC\ remain inactive for the duration of tZZREC after the ZZ input returns LOW. Accesses pending when entering “sleep” mode are not considered valid. Functional Description |
|
|
Link URL |
| Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Liên kết đến bảng dữ liệu | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |