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STM32F091CB bảng dữ liệu(PDF) 56 Page - STMicroelectronics |
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STM32F091CB bảng dữ liệu(HTML) 56 Page - STMicroelectronics |
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56 / 127 page ![]() Electrical characteristics STM32F091xB STM32F091xC 56/127 DocID026284 Rev 3 6.3.4 Embedded reference voltage The parameters given in Table 28 are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 24: General operating conditions. 6.3.5 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 14: Current consumption measurement scheme. All Run-mode current consumption measurements given in this section are performed with a reduced code that gives a consumption equivalent to CoreMark code. VPVD6 PVD threshold 6 Rising edge 2.66 2.78 2.9 V Falling edge 2.56 2.68 2.8 V VPVD7 PVD threshold 7 Rising edge 2.76 2.88 3 V Falling edge 2.66 2.78 2.9 V VPVDhyst(1) PVD hysteresis - 100 - mV IDD(PVD) PVD current consumption - 0.15 0.26(1) µA 1. Guaranteed by design, not tested in production. Table 27. Programmable voltage detector characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit Table 28. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.16 1.2 1.25 V tSTART ADC_IN17 buffer startup time -- - 10(1) µs tS_vrefint ADC sampling time when reading the internal reference voltage - 4(1) 1. Guaranteed by design, not tested in production. -- µs ΔVREFINT Internal reference voltage spread over the temperature range VDDA = 3 V - - 10(1) mV TCoeff Temperature coefficient - - 100(1) - 100(1) ppm/°C |
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