This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21526

Rev: B Amendment/+2

Issue Date: July 2, 1999

Am29F200B

2 Megabit (256 K x 8-Bit/128 K x 16-Bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

s 5.0 V

± 10% for read and write operations

— Minimizes system level power requirements

s Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F200A device

s High performance

— Access times as fast as 45 ns

s Low power consumption

— 20 mA typical active read current (byte mode)

— 28 mA typical active read current for

(word mode)

— 30 mA typical program/erase current

—1

µA typical standby current

s Sector erase architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

three 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

three 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

Sectors can be locked via programming equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

s Top or bottom boot block configurations available

s Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

s Minimum 1,000,000 write/erase cycles guaranteed

s 20-year data retention at 125

°C

— Reliable operation for the life of the system

s Package options

— 44-pin SO

— 48-pin TSOP

— Known Good Die (KGD)

(see publication number 21257)

s Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply flash

— Superior inadvertent write protection

s Data# Polling and Toggle Bit

— Detects program or erase cycle completion

s Ready/Busy# output (RY/BY#)

— Hardware method for detection of program or

erase cycle completion

s Erase Suspend/Erase Resume

— Supports reading data from a sector not

being erased

s Hardware RESET# pin

— Resets internal state machine to the reading

array data